Silicon-power CCS TA 43N40_N-Type Semiconductor Discharge Switch Instrukcja Użytkownika Strona 2

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Performance Characteristics
T
J
=25
o
C unless otherwise specified
Measurements
Parameters Symbol Test Conditions Min. Typ. Max. Units
Anode to Cathode Breakdown Voltage
V
DR
V
GK
=0, I
A
=1mA
Note: 3 4 kV
Anode-Cathode Off-State Current
I
D
V
GK
=0V, V
AK
=4000V T
J
=25
o
C
20 100 uA
Note: 3 & 4
T
J
=125
o
C
100 800 uA
Turn-On Threshold Current
V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA , see Note: 3 & 5
70 mA
Gate-Cathode Leakage Current
I
GK(lkg)
V
GK
=-9V, see Note: 1
-20 uA
Anode-Cathode On-State Voltage
V
T
I
T
=100A T
J
=25
o
C
1.8 V
Ig = 500 mA
T
J
=125
o
C
2 V
Turn-on Delay Time
t
D(ON)
C=0.75 uF Capacitor discharge
160 ns
Pk Rate of Change of Current (measured) dI/dt Ls=150nH 25 kA/us
Peak Anode Current
I
P
R
gk
= 10 ohms V
AK
= 3750 V
2950 A
Gate di/dt =100 A/us
T
c
=25
°
C
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
CCSTA43N40A10
Solidtron
TM
N-Type Semiconductor Discharge Switch, ThinPak
TM
Notes:
1. Measurements made with a 10 Ohm shorting resistor connected between the gate and cathode.
2. Case Exterior Assummed to be 0.002" of 63Sn/37Pb solder applied directly to cathode bond area of ThinPak.
3. Performance guarenteed by design only.
4. Production testing is limited to 2KV prior to encapsulation.
5. Characterization accomplished using R
gk
=10 ohms.
Typical Performance Curves
(unless otherwise specified)
Figure 1.
Measured Low current
On-State Characteristics.
CAO 05/28/09
5. Characterization accomplished using R
gk
=10 ohms.
CAO 05/28/09
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