Silicon-power CCS AC 53N30_N-Type Semiconductor Discharge Switch Instrukcja Użytkownika Pobierz pdf (Strona 3)

Typical Performance Curves

(Continued)

Figure 3.

Predicted I

t data for various number of discharge cycles. Pulses are assumed rectangular.

The device junction temperature T

is assumed to be at 25

C before each discharge event.

Test Circuit

275 Great Valley Parkway

Malvern, PA 19355

Ph: 610-407-4700

CCSAC53N30A10

Solidtron

N-Type Semiconductor Discharge Switch, Bare Die

Test Circuit

Figure 4. Typical test circuit and waveforms.

CAO 05/28/09

 L

SERIES(TOTAL)

can be caculated using

equation 1 / (f 2π)

C where f = frequency of I

when using CCSAC53N30 for circuit set up and

calibration.

 The waveform shown is representative of one

produced using the test circuit shown where the

DUT is the CCSAC53N30 Solidtron. The C1

capacitor voltage in this example was at 2.1kV.

Ik peaked at 4kA at 1us and the peak gate

current Ig is 1A.

A-K DUT

k DUT

DUT

=1 ohm

=10 ohms

=6 uF

~45uH

1 2 3 4 5

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Silicon-power CCS AC 53N30_N-Type Semiconductor Discharge Switch Instrukcja Użytkownika Strona 3